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Laser produced plasmas are widely used as extreme ultraviolet (EUV) and soft X-ray radiation sources in many different fields. Lithography is one of the most challenging applications of the EUV spectral region (5-50 nm). The worldwide importance of EUV lithography (EUVL) is basically due to its potential to extend optical projection lithography to higher resolution in integrated circuit manufacturing, thanks to the shorter wavelength and to the availability of high reflectivity normal incidence mirrors. In addition to the huge technological and financial effort carried out by international consortia to raise EUVL at the industrial level, less expensive laboratory-scale facilities have been built up to perform component testing and metrology. Within a national project on nanotechnologies at the ENEA Research Centre in Frascati a micro exposure tool (MET) has been designed and developed for projection lithography, exploiting the facility EGERIA (extreme ultraviolet radiation generation for experimental research and industrial applications). EGERIA is a EUV/soft X-ray laser produced plasma source equipped with a high efficiency debris mitigation system (DMS).

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