CHAPTER 8: The Group III-Nitride Material Class: from Preparation to Perspectives in Photoelectrocatalysis
Published:02 Oct 2013
R. Collazo and N. Dietz, in Photoelectrochemical Water Splitting: Materials, Processes and Architectures, ed. H. Lewerenz and L. Peter, The Royal Society of Chemistry, 2013, pp. 193-222.
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In this chapter, the physical properties of group III-nitride compound semiconductors are reviewed in the context of their potential application as semiconducting material in photoelectrocatalytic solar fuel structures. The band alignments in the InN-GaN-AlN-InN alloy system are summarized and discussed with respect to potential catalysts and the relevant HOMO and LUMO states, showing the potential for providing efficient charge transfer in photoelectrochemical cell structures. The present status in group III-nitride materials – fabrication, ternary alloy formation, stabilization and integration into envisioned materials structures – is presented together with challenges that have to be addressed to enable realization of the full potential of group III-nitrides to contribute to high-efficiency energy conversion and utilization.