Chapter 3: Towards spintronic quantum technologies with dopants in silicon
-
Published:03 Sep 2014
-
G. W. Morley, in Electron Paramagnetic Resonance: Volume 24, ed. V. Chechik, D. M. Murphy, and B. Gilbert, The Royal Society of Chemistry, 2014, vol. 24, ch. 3, pp. 62-76.
Download citation file:
Dopants in crystalline silicon such as phosphorus (Si:P) have electronic and nuclear spins with exceptionally long coherence times making them promising platforms for quantum computing and quantum sensing. The demonstration of single-spin single-shot readout brings these ideas closer to implementation. Progress in fabricating atomic-scale Si:P structures with scanning tunneling microscopes offers a powerful route to scale up this work, taking advantage of techniques developed by the computing industry. The experimental and theoretical sides of this emerging quantum technology are reviewed with a focus on the period from 2009 to mid-2014.