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II–VI semiconductors are binary, ternary, and quaternary compounds consisting of the elements from Groups IIB (Zn, Cd, Hg) and VIA (S, Se, Te). Due to their distinctive electronic and optoelectronic properties, such as a broad range of direct bandgaps (zero to ∼4 eV), large exciton binding energy and high electro‐optical coefficient, II–VI semiconductors are widely employed in the photoelectronics industries. In this chapter, we summarize the basic properties of II–VI semiconductors, and review the current advances in the synthesis techniques of bulk crystals and epitaxial films of II–VI compounds. The key issues for II–VI electronic and optoelectronic devices, including doping and metal–semiconductor contacts, are highlighted. We further introduce the current status of applications of II–VI semiconductors in light emission, photovoltaic conversion, and light and particle detection, and the latest progress in commercialized devices from leading manufacturers. The challenges and future perspectives in the fields are also discussed.

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