Advanced Memory Technology: Functional Materials and Devices
Advanced memory technologies are impacting the information era, representing a vibrant research area of huge electronic industry interest. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies.
Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems.
This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing.
Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.
Advanced Memory Technology: Functional Materials and Devices, Royal Society of Chemistry, 2023.
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Memory Technology: Development, Fundamentals, and Future Trendsp1-36ByZongwei Wang;Zongwei WangaSchool of Integrated Circuits, Peking University, Beijing, P. R. ChinabBeijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, P. R. ChinaSearch for other works by this author on:Yimao CaiYimao CaiaSchool of Integrated Circuits, Peking University, Beijing, P. R. ChinabBeijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, P. R. ChinaSearch for other works by this author on:
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Chapter 2: Biomemristors as the Next Generation Memory Devicesp37-59ByA. Moudgil;A. MoudgilaSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, SingaporeSearch for other works by this author on:N. Mishra;N. MishrabTwente Pathway College, Enschede, 7522 NM, The NetherlandsSearch for other works by this author on:S. Das;S. DascCentre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, IndiaSearch for other works by this author on:P. MishraP. MishradDepartment of Biochemical Engineering and Biotechnology, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, IndiaSearch for other works by this author on:
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Chapter 3: Organic Resistive Memories for Neuromorphic Electronicsp60-120ByYanling Zhuang;Yanling ZhuangaCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, P. R. ChinaSearch for other works by this author on:Shujuan Liu;Shujuan LiubState Key Laboratory of Organic Electronics and Information Displays and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, P. R. ChinaSearch for other works by this author on:Qiang ZhaoQiang ZhaoaCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, P. R. ChinabState Key Laboratory of Organic Electronics and Information Displays and Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, P. R. ChinaSearch for other works by this author on:
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Chapter 4: Low Frequency 1/f Conductance Noise in Memristorsp121-148BySk Kalimuddin;Sk KalimuddinaSchool of Physical Sciences, Indian Association for the Cultivation of Science, 2A and 2B, Raja Subodh Chandra Mallick Rd, Jadavpur, Kolkata, West Bengal 700032, IndiaSearch for other works by this author on:Satyabrata Bera;Satyabrata BeraaSchool of Physical Sciences, Indian Association for the Cultivation of Science, 2A and 2B, Raja Subodh Chandra Mallick Rd, Jadavpur, Kolkata, West Bengal 700032, IndiaSearch for other works by this author on:Arnab Bera;Arnab BeraaSchool of Physical Sciences, Indian Association for the Cultivation of Science, 2A and 2B, Raja Subodh Chandra Mallick Rd, Jadavpur, Kolkata, West Bengal 700032, IndiaSearch for other works by this author on:Suman Kalyan Pradhan;Suman Kalyan PradhanaSchool of Physical Sciences, Indian Association for the Cultivation of Science, 2A and 2B, Raja Subodh Chandra Mallick Rd, Jadavpur, Kolkata, West Bengal 700032, IndiaSearch for other works by this author on:Mintu MondalMintu MondalaSchool of Physical Sciences, Indian Association for the Cultivation of Science, 2A and 2B, Raja Subodh Chandra Mallick Rd, Jadavpur, Kolkata, West Bengal 700032, IndiaSearch for other works by this author on:
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Chapter 5: Electrical Bistability by Creating an Internal Electrical Field and Its Application in Emerging Two-terminal Electronic Memory Devicesp149-182ByFebin Paul;Febin PaulEmerging Technologies Research Centre, De Montfort University, UKSearch for other works by this author on:Shashi PaulShashi PaulEmerging Technologies Research Centre, De Montfort University, UKSearch for other works by this author on:
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Chapter 6: Memory Devices Based on Low-dimensional Materialsp183-200ByJayanta Bera;Jayanta BeraDepartment of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, IndiaSearch for other works by this author on:Atanu Betal;Atanu BetalDepartment of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, IndiaSearch for other works by this author on:Satyajit SahuSatyajit SahuDepartment of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, IndiaSearch for other works by this author on:
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Chapter 7: Development, Challenges, and Future Opportunities of Spintronic Memory Devicesp201-222ByY.-C. Liao;Y.-C. LiaoaComponents Research, Intel Corporation, USASearch for other works by this author on:P. KumarP. KumarbGeorgia Institute of Technology, USASearch for other works by this author on:
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Chapter 8: Dual-gate Ferroelectric Field-effect Transistors: An Emerging Computational Memory for Advanced Logic Operationsp223-239ByZheng-Dong Luo;Zheng-Dong LuoaHangzhou Institute of Technology, Xidian University, Hangzhou 311200, ChinabState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinaSearch for other works by this author on:Yan Liu;Yan LiubState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinacResearch Center for Intelligent Chips, Zhejiang Lab, Hangzhou 311121, ChinaSearch for other works by this author on:Genquan Han;Genquan HanaHangzhou Institute of Technology, Xidian University, Hangzhou 311200, ChinabState Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, ChinacResearch Center for Intelligent Chips, Zhejiang Lab, Hangzhou 311121, ChinaSearch for other works by this author on:Marin AlexeMarin AlexedDepartment of Physics, The University of Warwick, Coventry, CV4 7AL, UKSearch for other works by this author on:
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Chapter 9: Stochastic Emerging Resistive Memories for Unconventional Computingp240-269ByDingchen Wang;Dingchen WangaDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong KongbACCESS – AI Chip Center for Emerging Smart Systems, InnoHK Centers, Hong Kong Science Park, Hong KongSearch for other works by this author on:Shuhui Shi;Shuhui ShiaDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong KongbACCESS – AI Chip Center for Emerging Smart Systems, InnoHK Centers, Hong Kong Science Park, Hong KongSearch for other works by this author on:Yi Zhang;Yi ZhangaDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong KongbACCESS – AI Chip Center for Emerging Smart Systems, InnoHK Centers, Hong Kong Science Park, Hong KongSearch for other works by this author on:Dashan Shang;Dashan ShangcKey Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, ChinaSearch for other works by this author on:Qing Wang;Qing WangdSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, ChinaSearch for other works by this author on:Hongyu Yu;Hongyu YudSchool of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, ChinaSearch for other works by this author on:Zhongrui WangZhongrui WangaDepartment of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong KongbACCESS – AI Chip Center for Emerging Smart Systems, InnoHK Centers, Hong Kong Science Park, Hong KongSearch for other works by this author on:
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Chapter 10: Indium–Gallium–Zinc Oxide (IGZO)-based ReRAM: Material Overview, Latest Development and Technology Perspectivep270-289ByArnab Datta;Arnab DattaDepartment of Electronics & Communication Engineering, Indian Institute of Technology (IIT) Roorkee, Uttarakhand 247 667, IndiaSearch for other works by this author on:Rishabh Kishore;Rishabh KishoreDepartment of Electronics & Communication Engineering, Indian Institute of Technology (IIT) Roorkee, Uttarakhand 247 667, IndiaSearch for other works by this author on:Kavita VishwakarmaKavita VishwakarmaDepartment of Electronics & Communication Engineering, Indian Institute of Technology (IIT) Roorkee, Uttarakhand 247 667, IndiaSearch for other works by this author on:
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Chapter 11: Emerging Memristive Artificial Neurons for Energy-efficient Neuromorphic Electronic Systemsp290-306BySanghyeon Choi;Sanghyeon ChoiaKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of KoreaSearch for other works by this author on:Gwanyeong Park;Gwanyeong ParkaKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of KoreaSearch for other works by this author on:Gunuk WangGunuk WangaKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of KoreabDepartment of Integrative Energy Engineering, Korea University, Seoul 02841, Republic of KoreacCenter for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul 02792, Republic of KoreaSearch for other works by this author on:
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Chapter 12: Memory, Memristive, and Neuromorphic Devices Based on Two-dimensional Transition Metal Dichalcogenidesp307-338ByXiaogan LiangXiaogan LiangMechanical Engineering Department, University of Michigan, 2350 Hayward Avenue, Ann Arbor, Michigan 48109, USASearch for other works by this author on:
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Chapter 13: In-sensor Computing Based on Two-terminal Optoelectronic Memristorsp339-372ByYa Lin;Ya LinKey Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, ChinaSearch for other works by this author on:Zhongqiang Wang;Zhongqiang WangKey Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, ChinaSearch for other works by this author on:Xiaoning Zhao;Xiaoning ZhaoKey Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, ChinaSearch for other works by this author on:Haiyang Xu;Haiyang XuKey Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, ChinaSearch for other works by this author on:Yichun LiuYichun LiuKey Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, ChinaSearch for other works by this author on:
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Chapter 14: Memory Devices and Artificial Synapses with 2D Materialsp373-408ByAdithi Krishnaprasad;Adithi KrishnaprasadNanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USASearch for other works by this author on:Tania RoyTania RoyNanoScience Technology Center, University of Central Florida, Orlando, FL, 32826, USASearch for other works by this author on:
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Chapter 15: Polymer-based Transistor-type Memory and Artificial Synapsesp409-430ByW. Y. LeeW. Y. LeeDepartment of Chemical Engineering and Biotechnology, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 10608, TaiwanSearch for other works by this author on:
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Chapter 16: Amorphous Oxide Semiconductor Memristors: Brain-inspired Computationp431-457ByM. E. Pereira;M. E. Pereirai3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2831-518 Caparica, PortugalSearch for other works by this author on:E. Carlos;E. Carlosi3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2831-518 Caparica, PortugalSearch for other works by this author on:E. Fortunato;E. Fortunatoi3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2831-518 Caparica, PortugalSearch for other works by this author on:R. Martins;R. Martinsi3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2831-518 Caparica, PortugalSearch for other works by this author on:P. Barquinha;P. Barquinhai3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2831-518 Caparica, PortugalSearch for other works by this author on:A. KiazadehA. Kiazadehi3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology and CEMOP/UNINOVA, NOVA University Lisbon, Campus de Caparica, 2831-518 Caparica, PortugalSearch for other works by this author on:
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Chapter 17: Working Dynamics in Low-dimensional Material-based Neuromorphic Devicesp458-497ByT. Ahmed;T. AhmedaPak-Austria Fachhochschule: Institute of Applied Sciences and Technology, Haripur 22620, PakistanbSchool of Engineering, RMIT University, 124 La Trobe Street, 3001 Melbourne, Victoria, AustraliaSearch for other works by this author on:V. Krishnamurthi;V. KrishnamurthibSchool of Engineering, RMIT University, 124 La Trobe Street, 3001 Melbourne, Victoria, AustraliaSearch for other works by this author on:S. WaliaS. WaliabSchool of Engineering, RMIT University, 124 La Trobe Street, 3001 Melbourne, Victoria, AustraliaSearch for other works by this author on:
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Chapter 18: Halide Perovskites for Neuromorphic Computingp498-514ByMaria Vasilopoulou;Maria VasilopoulouaInstitute of Nanoscience and Nanotechnology, National Centre for Scientific Research Demokritos, 15341, Agia Paraskevi, Attica, GreeceSearch for other works by this author on:Konstantinos Davazoglou;Konstantinos DavazogloubDepartment of Informatics and Telecommunications, National and Kapodistrian University of Athens, GR 15784 Athens, GreeceSearch for other works by this author on:Abd Rashid bin Mohd Yusoff;Abd Rashid bin Mohd YusoffcDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Republic of KoreaSearch for other works by this author on:Yang Chai;Yang ChaidDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaeThe Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, ChinaSearch for other works by this author on:Yong-Young Noh;Yong-Young NohcDepartment of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 37673, Republic of KoreaSearch for other works by this author on:Thomas Anthopoulos;Thomas AnthopoulosfPhysical Science and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi ArabiaSearch for other works by this author on:Mohammad Khaja NazeeruddinMohammad Khaja NazeeruddingInstitute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Rue de l’Industrie 17, CH-1951 Sion, SwitzerlandSearch for other works by this author on:
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Chapter 19: Silicon Oxide-based CBRAM Memory and Neuromorphic Propertiesp515-529ByP. Bousoulas;P. BousoulasSchool of Applied Mathematical and Physical Sciences, National Technical University of Athens, Iroon Polytechniou 9, 15772, GreeceSearch for other works by this author on:D. TsoukalasD. TsoukalasSchool of Applied Mathematical and Physical Sciences, National Technical University of Athens, Iroon Polytechniou 9, 15772, GreeceSearch for other works by this author on:
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Chapter 20: Oxide Neuromorphic Transistors for Brain-like Computingp530-554ByBaocheng Peng;Baocheng PengSchool of Electronic Science and Engineering, Nanjing University, 210093 Nanjing, ChinaSearch for other works by this author on:Qing WanQing WanSchool of Electronic Science and Engineering, Nanjing University, 210093 Nanjing, ChinaSearch for other works by this author on:
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Chapter 21: Sensing–Storage–Computing Integrated Devices Based on Carbon Nanomaterialsp555-568ByYun Sun;Yun SunaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. ChinabSchool of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. ChinaSearch for other works by this author on:Dong-Ming SunDong-Ming SunaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. ChinabSchool of Material Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. ChinaSearch for other works by this author on:
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Chapter 22: Resistive Switching-based Neuromorphic Devices for Artificial Neural Networksp569-598ByMahesh Y. Chougale;Mahesh Y. ChougaleaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:Rayyan Ali Shaukat;Rayyan Ali ShaukataDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:Swapnil R. Patil;Swapnil R. PatilaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:Muhammad Noman;Muhammad NomanaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:Jungmin Kim;Jungmin KimaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:Qazi Muhammad Saqib;Qazi Muhammad SaqibaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:Muhammad Umair Khan;Muhammad Umair KhanaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreabSystem on Chip Center, Department of Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi 127788, United Arab EmiratesSearch for other works by this author on:Jinho BaeJinho BaeaDepartment of Ocean System Engineering, Jeju National University, 102 Jejudaehakro, Jeju 63243, KoreaSearch for other works by this author on:
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Chapter 23: Silicon-based Heterostructures for Optoelectronic Synaptic Devicesp599-621ByYue Wang;Yue WangaState Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310028, ChinabInstitute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311216, ChinaSearch for other works by this author on:Deren Yang;Deren YangaState Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310028, ChinabInstitute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311216, ChinaSearch for other works by this author on:Xiaodong PiXiaodong PiaState Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310028, ChinabInstitute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang 311216, ChinaSearch for other works by this author on:
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Chapter 24: Hybrid Devices for Neuromorphic Applicationsp622-655ByShobith M. Shanbogh;Shobith M. ShanboghaDepartment of Physics, School of Applied Sciences, REVA University, Bengaluru-63, IndiaSearch for other works by this author on:R. Anju Kumari;R. Anju KumariaDepartment of Physics, School of Applied Sciences, REVA University, Bengaluru-63, IndiabCenter for Advancing Electronics Dresden (CFAED), Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Dresden 1068, GermanySearch for other works by this author on:Ponnam AnjaneyuluPonnam AnjaneyuluaDepartment of Physics, School of Applied Sciences, REVA University, Bengaluru-63, IndiaSearch for other works by this author on:
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Chapter 25: Algorithmic Optimisation for Memristive Deep Learning Acceleratorsp656-679ByA. Mehonic;A. MehonicDepartment of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UKSearch for other works by this author on:D. Joksas*D. Joksas*Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UKSearch for other works by this author on:
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Chapter 26: Memristive Devices for Neuromorphic and Deep Learning Applicationsp680-704ByB. Walters;B. WaltersaCollege of Science and Engineering, James Cook University, Townsville, QLD, 4811, AustraliaSearch for other works by this author on:C. Lammie;C. LammieaCollege of Science and Engineering, James Cook University, Townsville, QLD, 4811, AustraliabIBM Research – Zürich, Rüschlikon, 8803, SwitzerlandSearch for other works by this author on:J. Eshraghian;J. EshraghiancDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48105, USASearch for other works by this author on:C. Yakopcic;C. YakopcicdDepartment of Electrical and Computer Engineering, University of Dayton, Dayton OH, USASearch for other works by this author on:T. Taha;T. TahadDepartment of Electrical and Computer Engineering, University of Dayton, Dayton OH, USASearch for other works by this author on:R. Genov;R. GenoveDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, CanadaSearch for other works by this author on:M. V. Jacob;M. V. JacobaCollege of Science and Engineering, James Cook University, Townsville, QLD, 4811, AustraliaSearch for other works by this author on:A. Amirsoleimani;A. AmirsoleimanifDepartment of Electrical Engineering and Computer Science, York University, Toronto, CanadaSearch for other works by this author on:M. R. AzghadiM. R. AzghadiaCollege of Science and Engineering, James Cook University, Townsville, QLD, 4811, AustraliaSearch for other works by this author on:
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