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Floating gate charge storage devices are one of the largest families of organic transistor-type memory electronics. The quantity of charge carriers stored in a specific trapping site can be precisely controlled in floating gate memory, breaking through the limitations of device size and meeting the requirement for high density data storage. In this chapter, we briefly introduce common charge storage materials, mostly metallic nanoparticles, used as charge storage elements. Then floating gate materials with various fabrication processes and chemical structures are discussed. In addition, the operating mechanism and future flexible digital memory electronic devices using floating gate charge storage layers are presented.

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