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Transition metal dichalcogenide monolayers have attracted great research interest and have shown great potential for application in next-generation integrated circuits. Among all the bottom–up synthetic approaches, chemical vapor deposition provides superior control of the sheet thickness and uniformity in a scalable size. The strategies to synthesize two-dimensional layers and their heterostructures are highlighted. Uniform and defect-free layered materials are highly desired for high-performance electronics and optoelectronics.

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